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| TPCF8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8301 Notebook PC Applications Portable Equipment Applications * * * * Low drain-source ON resistance: RDS (ON) = 72 m (typ.) High forward transfer admittance: |Yfs| = 4.7 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -20 V) Enhancement model: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -200 A) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating -20 -20 8 -2.7 -10.8 1.35 1.12 W 0.53 0.33 1.2 -1.35 0.11 150 -55~150 mJ A mJ 1 C C 2 3 4 Unit V V V JEDEC A 2-3U1B JEITA TOSHIBA Single-device operation Drain power (Note 3a) dissipation (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Drain power dissipation (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Single pulse avalanche energy Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range (Note 4) Single-device operation (Note 3a) Weight: 0.011 g (typ.) Circuit Configuration 8 7 6 5 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-16 TPCF8301 Thermal Characteristics Characteristics Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 92.6 C/W 111.6 235.8 C/W 378.8 Unit Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6): See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution. Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) Drain-source ON resistance RDS (ON) RDS (ON) Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd |Yfs| Ciss Crss Coss tr VGS ton 0V -5 V 4.7 ID = -1.4 A VOUT RL = 7.14 VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 8 V, VDS = 0 V VDS = -20 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 8 V VDS = -10 V, ID = -200 A VGS = -1.8 V, ID = -0.7 A VGS = -2.5 V, ID = -1.4 A VGS = -4.5 V, ID = -1.4 A VDS = -10 V, ID = -1.4 A Min -20 -12 -0.5 2.4 Typ. 215 110 72 4.7 470 70 80 5 9 8 26 6 4 2 Max 10 -10 -1.2 300 160 110 ns nC pF S m Unit A A V V Duty < 1%, tw = 10 s = VDD -10 V - VDD -16 V, VGS = -5 V, - ID = -2.7 A Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = -2.7 A, VGS = 0 V Min Typ. Max -10.8 1.2 Unit A V 2 2006-11-16 TPCF8301 Marking (Note 6) Lot code (month) Lot No. Part No. (or abbreviation code) F3C Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Pin #1 Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device 25.4 FR-4 25.4 x 25.4 x 0.8 (unit: mm) FR-4 25.4 x 25.4 x 0.8 (unit: mm) 25.4 (a) (b) (During single-device operation, power is only applied to one device.). b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note 4: VDD = -16 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = -1.35 A Note 5: Repetitive rating: Pulse width limited by maximum channel temperature. Note 6: A dot on the lower left of the marking indicates Pin 1 3 2006-11-16 TPCF8301 ID - VDS -5 -4 -4.5 -4 -2.5 -2.8 -3.5 -3 -2 -8 -1.8 -10 -4.5 -5 -2.8 ID - VDS -2.5 -3 -3.5 -6 -4 Common source Ta = 25C Pulse test -2 -1.8 Drain current ID (A) -2 VGS = -1.5 V -1 Common source Ta = 25C Pulse test -0.2 -0.4 -0.6 -0.8 -1.0 Drain current ID (A) -5 -3 -4 -2 VGS = -1.5 V 0 0 0 0 -1 -2 -3 -4 -5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS -5 Common source VDS = -10 V Pulse test -1.0 VDS - VGS Common source Ta = 25C Pulse test -4 VDS (V) Ta = 25C -0.8 Drain current ID (A) -2 Drain-source voltage -3 -0.6 -0.4 -1 Ta = -55C Ta = 100C -0.2 ID = -2.7 A -1.4 A 0 0 -0.5 -1.0 -1.5 -2.0 -2.5 0 0 -0.7 A -2 -4 -6 -8 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 100 Common source VDS = -10 V Pulse test 1000 Common source Ta = 25C Pulse test RDS (ON) - ID |Yfs| (S) Drain-source on resistance RDS (ON) (m) -1.8 V -2.5 V 100 VGS = -4.5 V Forward transfer admittance 10 Ta = 25C Ta = -55C Ta = 100C 1 -0.1 -1 -10 10 -0.1 -1 -10 Drain current ID (A) Drain current ID (A) 4 2006-11-16 TPCF8301 RDS (ON) - Ta 300 Common source Pulse test -100 ID = -1.4 A -0.7 A VGS = -1.8 V 200 ID = -1.4 A 150 ID = -2.7 A -0.7 A Common source Ta = 25C Pulse test IDR - VDS Drain-source on resistance RDS (ON) (m) Drain reverse current IDR (A) 250 -10 -2.5 -4.5 100 -2.5 V ID = -0.7, -1.4, -2.7 A -1.8 -1 VGS = 0 V 50 -4.5 V 0 -80 -40 0 40 80 120 160 -1 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 Common source VGS = 0 V f = 1 MHz Ta = 25C -2.0 Common source VDS = -10 V ID = -200 A Pulse test Vth - Ta Vth (V) Ciss -1.5 (pF) Gate threshold voltage 1000 Capacitance C -1.0 100 Coss Crss -0.5 -0.0 -80 10 -0.1 -1 -10 -100 -40 0 40 80 120 160 Ambient temperature Ta (C) Drain-source voltage VDS (V) PD - Ta 2 t=5s Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) -20 Dynamic input/output characteristics -10 Drain power dissipation PD (W) VDS (V) 1.6 (1) 1.2 (2) -16 -4 V VDS -12 VGS -8 Drain-source voltage 0.8 (3) 0.4 (4) -8 Common source ID = -2.7 A Ta = 25C Pulse test -4 -4 -2 0 0 40 80 120 160 0 0 -2 -4 -6 -8 0 -10 Ambient temperature Ta (C) Total gate charge Qg (nC) 5 2006-11-16 Gate-source voltage VDD = -16 V -6 VGS (V) -8 V TPCF8301 rth - tw 1000 Transient thermal impedance rth (C/W) (4) (3) (2) 100 (1) Device mounted on a glass-epoxy board (a) 10 (1) Single-device operation (2) Single-device value at dual operation Device mounted on a glass-epoxy board (b) (3) Single-device operation 1 1m (4) Single-device value at dual operation 10 m 100 m 1 10 100 1000 Pulse width tw (s) Safe operating area -100 Drain current ID (A) ID max (pulsed)* -10 1 ms* 10 ms* -1 *: Single nonrepetitive pulse Ta = 25C Curves must be derated linearly with increase in temperature -0.1 -0.1 VDSS max -1 -10 -100 Drain-source voltage VDS (V) 6 2006-11-16 TPCF8301 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-11-16 |
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